New and Original Transistors 20N60C3 

 

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 34.5W (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 13.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-31 Full Pack
Package / Case TO-220-3 Full Pack

New and Original Transistors 20N60C3

SKU: PS4-IC-026
R125,00Price

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